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revisions ltr description date (yr-mo-da) approved a changes in accordance with nor 5962-r106-96. ? sbr 96-04-16 m. a. frye b changes in accordance with nor 5962-r255-97. ? drw 97-03-31 raymond monnin c change the limit of bipolar zero error te st, table i, sheet 5. editorial changes throughout. - drw 01-09-20 raymond monnin rev sheet rev c c sheet 15 16 rev status rev c c c c c c c c c c c c c c of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by sandra rooney defense supply center columbus standard microcircuit drawing checked by sandra rooney columbus, ohio 43216 http://www.d scc.dla.mil this drawing is available for use by all departments approved by michael a. frye microcircuit, linear, 8-channel, 12-bit serial, data acquisition system, and agencies of the department of defense drawing approval date 96-03-27 monolithic silicon amsc n/a revision level c size a cage code 67268 5962-95615 sheet 1 of 16 dscc form 2233 apr 97 5962-e276-01 distribution statement a . approved for public releas e; distribution is unlimited.
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class le vels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha ) levels are reflected in the pin. 1.2 pin . the pin is as shown in the following example: 5962 - 95615 01 m l a federal stock class designator rha designator (see 1.2.1) device type (see 1.2.2) device class designator case outline (see 1.2.4) lead finish (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator . device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type . the device type identify the circuit function as follows: device type generic number circuit function 01 ad7890-10 8-channel, 12-bit serial, data acquisition system 1.2.3 device class designator . the device class designator is a single letter identifying the product assurance level as follows: device class device requirements documentation m vendor self-certification to the requirements for mil-std-883 compliant, non- jan class level b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-38535 1.2.4 case outline(s) . the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style j gdip1-t24 or cdip2-t24 24 dual-in-line l gdip3-t24 or cdip4-t24 24 dual-in-line 1.2.5 lead finish . the lead finish is as specified in mil-pr f-38535 for device classes q and v or mil-prf-38535, appendix a for device class m.
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 3 dscc form 2234 apr 97 1.3 absolute maximum ratings . 1 / v dd to agnd ................................................................................................................. -0.3 v dc to +7 v dc v dd to dgnd ................................................................................................................. -0.3 v dc to +7 v dc analog input voltage to agnd....................................................................................... 17 v dc reference input voltage to agnd ................................................................................. -0.3 v dc t o v dd + 0.3 v dc digital input voltage to dgnd........................................................................................ -0.3 v dc to v dd + 0.3 v dc digital output voltage to dgnd...................................................................................... -0.3 v dc to v dd + 0.3 v dc junction temperature (t j ) .............................................................................................. +150 c power dissipation (p d ) ................................................................................................... 450 mw thermal resistance, junction-to-ambient ( ja ) ............................................................... 70 c/w thermal resistance, junction-to-case ( jc ) .................................................................... see mil-std-1835 lead temperature (solderi ng, 10 seconds ).................................................................... +300 c 1.4 recommended operating conditions . ambient operating tem perature range........................................................................... -55 c to +125 c 2. applicable documents 2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless ot herwise specified, the issues of these documents are those liste d in the issue of the department of defense i ndex of specifications and standards (dodi ss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. mil-std-1835 - interface standard electronic component case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specificat ion, standards, and handbooks are ava ilable from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 order of precedence . in the event of a conflict between the text of th is drawing and the references cited herein, the text of this drawing takes precedence. nothing in this docum ent, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 1 / stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability.
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 4 dscc form 2234 apr 97 3. requirements 3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer' s quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.2 design, construction, and physical dimensions . the design, construction, and physica l dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outlines . the case outlines shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections . the terminal connections sha ll be as specified on figure 1. 3.2.3 ideal input/output table . the ideal input/output table shall be as specified on figure 2. 3.3 electrical perform ance characteristics and posti rradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as s pecified in table i and shall apply over th e full ambient operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in t able ii. the electrical tests for each subgroup are defined in table i. 3.5 marking . the part shall be marked with the pin listed in 1.2 her ein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for pa ckages where marking of the entire smd pi n number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device cl asses q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to t he requirements of this drawing (see 6.6.1 herein). for device class m, a certifica te of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to ds cc-va prior to listing as an approv ed source of supply for this drawing shall affirm that the manufactu rer's product meets, for device classes q and v, the requirements of mil-prf-38535 and herein or for device class m, the requi rements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-prf-38535, appendix a. 3.9 verification and review for device class m . for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offs hore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 81 (see mil-prf-38535, appendix a).
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 5 dscc form 2234 apr 97 table i. electrical per formance characteristics . test symbol conditions 1 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max signal to noise + distortion ratio snr f in = 10 khz sine wave, f sample = 100 khz v dd = +4.75 v dc 1, 2, 3 01 70 db total harmonic distortion thd f in = 10 khz sine wave, f sample = 100 khz v dd = +4.75 v dc 1, 2, 3 01 77 db peak harmonic or spurious distortion phn f in = 10 khz sine wave, f sample = 100 khz 1, 2, 3 01 78 db channel-to-channel isolation ci f in = 10 khz sine wave, v dd = +4.75 v dc 1, 2, 3 01 80 db resolution res 1, 2, 3 01 12 bits minimum resolution for which no missing codes are guaranteed mres 1, 2, 3 01 12 bits relative accuracy ra 1, 2, 3 01 1 lsb differential nonlinearity dnl 1, 2, 3 01 1 lsb positive full-scale error pfse 1, 2, 3 01 2.5 lsb full-scale error match 2 / fse 1, 2, 3 01 2 lsb negative full-scale error nfse v dd = +4.75 v dc 1, 2, 3 01 2 lsb bipolar zero error bze 1, 2, 3 01 5 lsb bipolar zero error match bzem 1, 2, 3 01 2 lsb input voltage range v in 1, 2, 3 01 -10 +10 v input resistance r in 1, 2, 3 01 20 k ? mux out output voltage range v out 1, 2, 3 01 0 2.5 v see footnotes at end of table.
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 6 dscc form 2234 apr 97 table i. electrical per formance characteristics - continued. test symbol conditions 1 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max mux out output resistance r out 1, 2, 3 01 3 5 k ? sha in input voltage range v sin 1, 2, 3 01 0 2.5 v sha in input current i sin v sin = 2.49 v 1, 2, 3 01 -50 +50 na ref in input voltage range v rin 1, 2, 3 01 2.375 2.625 v input impedance r rin resistor connected to internal reference node 1, 2, 3 01 1.6 k ? ref out voltage v rout 1 01 2.49 2.510 v 2, 3 2.475 2.525 logic input high voltage v inh v dd = 5 v 5% 1, 2, 3 01 2.4 v input low voltage v inl v dd = 5 v 5% 1, 2, 3 01 0.8 v input current i in v in = 0 v to v dd 1, 2, 3 01 -10 +10 a output high voltage v oh i source = 200 a, v dd = 4.75 v 1, 2, 3 01 4 v output low voltage v ol i sink = 1.6 ma, v dd = 4.75 v 1, 2, 3 01 0.4 v conversion time 3 / t conv f clkin = 2.5 mhz, v dd = 4.75 v, mux out connected to sha in 9, 10, 11 01 5.9 s supply voltage v dd 5% for specified performance 1, 2, 3 01 5 v supply current 4 / i dd logic inputs = 0 v or v dd 1, 2, 3 01 10 ma power dissipation p d 1, 2, 3 01 50 mw see footnotes at end of table.
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 7 dscc form 2234 apr 97 table i. electrical per formance characteristics - continued. test symbol conditions 1 /, 3 /, 5 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max master clock frequency 6 / f clkin 9, 10, 11 01 0.1 2.5 mhz master clock input low time t clkinl 9, 10, 11 01 0.3 x t clkin ns master clock input high time t clkinh 9, 10, 11 01 0.3 x t clkin ns digital output rise time 7 / t r 9, 10, 11 01 25 ns digital output fall time 7 / t f 9, 10, 11 01 25 ns conversion time t convert 9, 10, 11 01 5.9 s convst pulse width t cst 9, 10, 11 01 100 ns rfs low to sclk falling edge t 1 9, 10, 11 01 t clkinh + 50 ns rfs low to valid delay 8 / t 2 9, 10, 11 01 25 ns sclk high pulse width t 3 9, 10, 11 01 t clkinh ns sclk low pulse width t 4 9, 10, 11 01 t clkinl ns sclk rising edge to data valid delay 8 / t 5 9, 10, 11 01 20 ns sclk rising edge to rfs delay t 6 9, 10, 11 01 40 ns bus relinquish time after rising edge of sclk 9 / t 7 9, 10, 11 01 50 ns tfs low to sclk falling edge t 8 9, 10, 11 01 0 t clkin + 50 ns data valid to tfs falling edge setup time (a2 address bit) t 9 9, 10, 11 01 0 ns data valid to sclk falling edge setup time t 10 9, 10, 11 01 20 ns see footnotes at end of table.
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 8 dscc form 2234 apr 97 table i. electrical per formance characteristics - continued. test symbol conditions 1 /, 3 /, 5 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max data valid to sclk falling edge hold time t 11 9, 10, 11 01 10 ns tfs to sclk falling edge hold time t 12 9, 10, 11 01 20 ns rfs low to sclk falling edge setup time t 13 9, 10, 11 01 20 ns rfs low to data valid delay 8 / t 14 9, 10, 11 01 40 ns sclk high pulse width t 15 9, 10, 11 01 50 ns sclk low pulse width t 16 9, 10, 11 01 50 ns sclk rising edge to data valid delay 8 / t 17 9, 10, 11 01 35 ns rfs to sclk falling edge hold time t 18 9, 10, 11 01 20 ns bus relinquish time after rising edge of rfs t 19 9, 10, 11 01 50 ns bus relinquish time after rising edge of sclk 9 / t 19a 9, 10, 11 01 90 ns tfs low to sclk falling edge setup time t 20 9, 10, 11 01 20 ns data valid to sclk falling edge setup time t 21 9, 10, 11 01 10 ns data valid to sclk falling edge hold time t 22 9, 10, 11 01 15 ns tfs low to sclk falling edge hold time t 23 9, 10, 11 01 40 ns 1 / v dd = +5.25 v, agnd = dgnd = 0 v, ref in = +2.5 v, f clkin = 2.5 mhz external, mux out connected to sha in. 2 / full-scale error match applied to both positive and negative full scale. 3 / subgroups 9, 10, and 11 are tested initially and after any changes which may affect these paramet ers. see figures 3 and 4. 4 / analog inputs must be at 0 v to achieve correct power-down current. 5 / all input signals are specified with t r = t f = 5 ns (10% to 90% 0f 5 v) and timed from a voltage level of 1.6 v. tested initially and after any design changes which may affect these parameters. 6 / production tested with f clkin at 2.5 mhz. it is guaranteed by characterization to operate at 100 khz. 7 / specified using 10% and 90% points on waveform of interest. 8 / these numbers are measured with the load circuit of figure 3 and defined as the time required for the output to cross 0.8 v or 2.4 v. 9 / these numbers are derived from the measured time taken by the data output to change 0.5 v when loaded with the circuit of figure 3. the measured number is then extrapolated back to remove effects of charging or discharging the 50 pf capacitor. this means that the times quoted in the timing char acteristics are the true bus relinquish times of the part and as such are independent of external bus loading capacitances.
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 9 dscc form 2234 apr 97 device type 01 case outlines j and l terminal number terminal symbol 1 agnd 2 smode 3 dgnd 4 c ext 5 convst 6 clk in 7 sclk 8 tfs 9 rfs 10 data out 11 data in 12 v dd 13 mux out 14 sha in 15 agnd 16 v in1 17 v in2 18 v in3 19 v in4 20 v in5 21 v in6 22 v in7 23 v in8 24 ref out/ref in figure 1. terminal connections .
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 10 dscc form 2234 apr 97 analog input digital output code transition +fsr/2 ? 1 lsb (9.995117 v) 011 . . . 110 to 011 . . . 111 +fsr/2 ? 2 lsbs (9.990234 v) 011 . . . 101 to 011 . . . 110 +fsr/2 ? 3 lsbs (9.985352 v) 011 . . . 100 to 011 . . . 101 agnd + 1 lsb (0.004883 v) 000 . . . 000 to 000 . . . 000 agnd (0.000000 v) 111 . . . 111 to 000 . . . 000 agnd ? 1 lsb (0.004883 v) 111 . . . 110 to 111 . . . 111 -fsr/2 + 3 lsbs (-9.985352 v) 100 . . . 010 to 100 . . . 011 -fsr/3 + 2 lsbs (-9.990234 v) 100 . . . 001 to 100 . . . 010 -fsr/2 + 1 lsb (-9.995117 v) 100 . . . 000 to 000 . . . 000 figure 2. ideal in/output code table . figure 3. load circuit for access time and bus relinquish time .
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 11 dscc form 2234 apr 97 figure 4. timing waveforms .
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 12 dscc form 2234 apr 97 figure 4. timing waveforms - continued.
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 13 dscc form 2234 apr 97 figure 4. timing waveforms - continued.
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 14 dscc form 2234 apr 97 4. quality assurance provisions 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer's qua lity management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conform ance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conduct ed on all devices prior to qua lity conformance inspection. 4.2.1 additional criteria for device class m . a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c, d, or e. the test circui t shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and pow er dissipation, as applicable, in acco rdance with the intent specified in test method 1015. (2) t a = +125 c, minimum. b. interim and final electrical test parameter s shall be as specified in table ii herein. 4.2.2 additional criteria for device classes q and v . a. the burn-in test duration, test condi tion and test temperature, or approved alte rnatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf- 38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer' s technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. interim and final electrical test parameter s shall be as specified in table ii herein. c. additional screening for device class v beyond the require ments of device class q shall be as specified in mil-prf-38535, appendix b. 4.3 qualification inspection for device classes q and v . qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be perform ed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspec tions (see 4.4.1 through 4.4.4). 4.4 conformance inspection . technology conformance inspection for cl asses q and v shall be in accordance with mil-prf-38535 including groups a, b, c, d, and e inspections and as specified herein. qualit y conformance inspection for device class m shall be in accordance with mil-prf-38535, appendi x a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mi l-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4.1 group a inspection . a. tests shall be as specified in table ii herein. b. subgroups 4, 5, 6, 7, and 8 in table i, method 5005 of mil-std-883 shall be omitted. c. subgroups 9, 10, 11 are tested initially and after any design changes which may affect the parameters in those subgroups. 4.4.2 group c inspection . the group c inspection end-point electrical param eters shall be as specified in table ii herein.
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 15 dscc form 2234 apr 97 table ii. electrical test requirements . test requirements subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) device class m device class q device class v interim electrical parameters (see 4.2) 1, 2, 3 1, 2, 3 1, 2, 3 final electrical parameters (see 4.2) 1, 2, 3, 1 /, 2 / 9, 10, 11 1, 2, 3, 1 /, 2 / 9, 10, 11 1, 2, 3, 1 /, 2 / 9, 10, 11 group a test requirements (see 4.4) 1, 2, 3, 2 / 9, 10, 11 1, 2, 3, 2 / 9, 10, 11 1, 2, 3, 2 / 9, 10, 11 group c end-point electrical parameters (see 4.4) 1, 2, 3 1, 2, 3 1, 2, 3 group d end-point electrical parameters (see 4.4) 1, 2, 3 1, 2, 3 1, 2, 3 group e end-point electrical parameters (see 4.4) - - - - - - - - - 1 / pda applies to subgroup 1. 2 / subgroups 9, 10, 11 are tested initially and after any design changes which may affect the parameters in those subgroups. 4.4.2.1 additional criteria for device class m . steady-state life test conditions, method 1005 of mil-std-883: a. test condition a, b, c, d, or e. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acqui ring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q and v . the steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level c ontrol by the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the acquiring or prepar ing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. 4.4.3 group d inspection . the group d inspection end-point electrical param eters shall be as specified in table ii herein. 4.4.4 group e inspection . group e inspection is required only for par ts intended to be marked as radiation hardness assured (see 3.5 herein). a. end-point electrical parameters shall be as specified in table ii herein. b. for device classes q and v, the devices or test vehicl e shall be subjected to radiation hardness assured tests as specified in mil-prf-38535 for the rha level being tested. for device class m, the devices shall be subjected to radiation hardness assured tests as specified in mil- prf-38535, appendix a for the rha level being tested. all device classes must meet the postirradiation end-point el ectrical parameter limits as defined in table i at t a = +25 c 5 c, after exposure, to the subgroups specified in table ii herein. c. when specified in the purchase or der or contract, a copy of the rha delta limits shall be supplied.
standard microcircuit drawing size a 5962-95615 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 16 dscc form 2234 apr 97 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for gove rnment microcircuit applications (original equipment), design applic ations, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing will repl ace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 substitutability . device class q devices will replace device class m devices. 6.2 configuration control of smd's . all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform de fense supply center columbus when a system application requires configuration control and which smd's are applic able to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) shoul d contact dscc-va, telephone (614) 692-0544. 6.4 comments . comments on this drawing should be directed to dscc-va , columbus, ohio 43216-5000, or telephone (614) 692-0547. 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil-prf-38535 and mil-hdbk-1331. 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submitted a certificate of compliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for cl ass m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawi ng and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va.
standard microcircuit drawing bulletin date: 01-09-20 approved sources of supply for smd 5962-95615 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accept ed by dscc-va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535. standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962-9561501mla 24355 ad7890sq-10/qml 5962-9561501mja 3 / 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. 3 / not available from an approved source. vendor cage vendor name number and address 24355 analog devices rt 1 industrial park po box 9106 norwood, ma 02062 point of contact: bay f-1 raheen ind. estate limerick, ireland the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin.

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